Microchip has launched a range of high voltage 3.3kV silicon carbide (SiC) MOSFETs and diodes for traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs) and industrial motor drives and energy infrastructure

The devices include MOSFETs with an RDS(on) of 25 mΩ and Schottky Barrier Diodes (SBDs) with current rating of 90A. Both are available in die or package form. This allows designers to simplify their design, create higher-power systems and use fewer paralleled components for smaller, lighter and more efficient power solutions.

Microchip’s 3.3 kV MOSFETs and SBDs join 700V, 1200V and 1700V SiC die, discretes, modules and digital gate drivers.

• Microchip teams with Mersen for SiC reference design
• Microchip starts SiC power chip production
• Fully configurable digital gate driver for SiC
• Microchip expands range of SiC Schottky Barrier Diodes

“We focus on developments that provide our customers the ability to quickly innovate systems and move their end products into a competitive advantage position faster,” said Leon Gross, vice president of Microchip’s discrete product business unit.

“我们的新家庭3.3 kV碳化硅功率允许的产品s customers to move to high-voltage SiC with ease, speed and confidence and benefit from the many advantages of this exciting technology over silicon-based designs.”

The expanded SiC portfolio is supported by a range of SiC SPICE models compatible with Microchip’s MPLAB Mindi analog simulator modules and driver board reference designs. The Intelligent Configuration Tool (ICT) enables designers to model efficient SiC gate driver settings for Microchip’s AgileSwitch family of configurable digital gate drivers.