三个Altum射频MMIC放大器问,V,电子ands
Altum RF has announced three new GaAs pHEMT MMIC amplifiers targeting applications covering Q, V, and E-bands. Using WIN Semiconductors’ next-generation PP10-20 GaAs pHEMT technology, these compact die amplifiers achieve high gain and low noise, while simplifying design-in for engineers by using single gate and single drain supplies. Highlights of these amplifiers include:
- ARF1208 low noise amplifier covering 37-59 GHz with 2.5 dB noise figure and 26.5 dB linear gain at 50 GHz.
- ARF1207 linear amplifier covering 57-71 GHz with 25 dB gain and 22 dBm P1dB output power.
- ARF1206 low noise amplifier covering 71-86 GHz with 22 dB gain and 4 dB noise figure.
PP10-20 technology builds on the proven and mature PP10-10 platform and targets applications up to 170 GHz. As a key differentiator, PP10-20 allows for a substantial increase in gain, with the same operating voltage for power applications, and specifically in this case for MMIC amplifiers.
“Building on our experience with WIN Semiconductors’ proven 0.1 µm technology and with careful attention to modeling, design and simulation workflow, we achieved first-pass success with a family of millimeter-wave products in the newly-released PP10-20 process,” stated Greg Baker, Altum RF CEO. “This success supports our strategy to develop leading-edge components for millimeter-wave applications, and we look forward to building a broader portfolio of products to address today’s and future market requirements.”
David Danzilio, Senior Vice President, Technology and Strategic Business Development at WIN Semiconductors added, “This next generation PP10-20 technology builds upon the mature PP10-10 platform used in many of today’s E-band power amplifiers deployed in wireless backhaul. PP10-20 is a versatile technology enabling a wide range of millimeter-wave front-end functions and supports amplifier performance well into D-band. The first-pass success achieved by Altum RF confirms the reproducibility and production readiness of the PP10-20 platform.”
