Semiconductor memory developer Weebit Nano Ltd. (Hod Hasharon, Israel) has said it is scaling its embedded resistive random access memory (ReRAM) technology to 22nm.

Weebit is working with research institute CEA-Leti to design memory module includes a multimegabit ReRAM block targeting a 22nm fully-depleted silicon-on-insulator (FDSOI) process.

Globalfoundries有体积FDSOI process – 22FDX – at this node in manufacture at Dresden, Germany. The inability of flash memory to scale efficiently beyond about 28nm provides an opportunity for emerging non-volatile memory technologies to scale to more advanced nodes. In 2021 Weebit tested functional 1Mbit ReRAM arrays in a 28nm FDSOI process technology produced on 300mm-diameter wafers (seeWeebit Nano puts silicon-oxide ReRAM on 28nm FDSOI).

Scaling

Embedded flash memory is not expected to scale to 22nm providing an opportunity for Weebit, although phase-change memory, magnetic RAM and metal-oxide ReRAMs are also being developed to scale to these nodes.

In a statement Coby Hanoch, CEO of Weebit Nano, said: “We continue to progress Weebit’s memory technology to smaller geometries that serve applications such as IoT, 5G and AI, which are driving the need for a new type of non-volatile memory in process nodes where embedded flash is no longer a realistic option.”

“Combining ReRAM technology with FDSOI holds great promise for low-power embedded devices, which need a new type of non-volatile memory and will benefit from its efficiency and robustness,” said Olivier Faynot, head of the silicon component division at CEA-Leti, in the same statement.