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Discover how to improve the efficiency of power supply systems by using SiC MOSFETs. Toshiba’s 5kW isolated bidirectional DC-DC converter reference design uses the dual active bridge (DAB) method to put a greater emphasis on efficiency. The reference design offers a total solution from high power conversion efficiency using SiC MOSFETs on the high voltage side, to a low voltage side MOSFET and gate driver. The design is excellently suited for applications such as EV charging and photovoltaic inverters.